FDS6812A Fairchild Semiconductor, FDS6812A Datasheet - Page 3

MOSFET N-CH DUAL 20V 6.7A 8SOIC

FDS6812A

Manufacturer Part Number
FDS6812A
Description
MOSFET N-CH DUAL 20V 6.7A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6812A

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 6.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1082pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
37 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
6.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6812A
Manufacturer:
FAIRCHILD
Quantity:
2 285
Part Number:
FDS6812A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6812A-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6812A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0.5
Figure 3. On-Resistance Variation with
1.8
1.6
1.4
1.2
0.8
0.6
0
Figure 1. On-Region Characteristics.
1
-50
V
Figure 5. Transfer Characteristics.
DS
= 5V
V
V
I
D
GS
GS
-25
= 6.7A
3.5V
0.5
= 4.5V
= 4.5V
1
V
GS
V
0
, GATE TO SOURCE VOLTAGE (V)
DS
T
J
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
, JUNCTION TEMPERATURE (
2.5V
1
25
3.0V
1.5
T
A
50
= -55
1.5
o
C
75
2
100
2
125
2.0V
o
o
C)
C
125
2.5
25
o
2.5
C
150
175
3
3
Figure 6. Body Diode Forward Voltage Variation
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.0001
0.001
0
0.01
2.5
1.5
0.5
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
1
10
2
1
1
0
0
Drain Current and Gate Voltage.
V
GS
= 0V
V
Gate-to-Source Voltage.
GS
0.2
5
V
= 2.0V
SD
V
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
T
, GATE TO SOURCE VOLTAGE (V)
A
A
= 25
= 125
10
0.4
I
D
, DRAIN CURRENT (A)
2.5V
o
C
o
C
3.0V
3
15
0.6
25
T
125
o
A
C
=
o
C
3.5V
-55
0.8
20
o
C
4.0V
4
FDS6812A Rev B (W)
I
25
D
1
= 3.4 A
4.5V
1.2
30
5

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