FDS6812A Fairchild Semiconductor, FDS6812A Datasheet - Page 4

• Manufacturer Part Number: FDS6812A
• Description: MOSFET N-CH DUAL 20V 6.7A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6812A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 6.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1082pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Forward Transconductance Gfs (max / Min): 37 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
100
5
4
3
2
1
0
0.1
10
0.001
Figure 9. Maximum Safe Operating Area.
1
0
0.01
0.01
Figure 7. Gate Charge Characteristics.
0.1
0.0001
1
R
SINGLE PULSE
I
R
D
DS(ON)
= 6.7A
V
JA
T
GS
A
2
= 135
= 25
LIMIT
= 4.5V
D = 0.5
o
o
0.2
C
C/W
0.1
0.05
0.1
0.02
4
V
DS
0.01
Q
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
g
0.001
, GATE CHARGE (nC)
6
1
Figure 11. Transient Thermal Response Curve.
DC
8
V
10s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
DS
1s
= 5V
100ms
0.01
10
10ms
15V
1ms
10
12
100
10V
14
0.1
100
t
1
, TIME (sec)
1800
1500
1200
900
600
300
50
40
30
20
10
0
0.01
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.1
4
V
Power Dissipation.
C
DS
ISS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
t
8
1
, TIME (sec)
C
P(pk)
OSS
Duty Cycle, D = t
T
R
10
J
R
12
- T
JA
JA
(t) = r(t) * R
100
A
t
= 135
C
1
= P * R
t
RSS
2
SINGLE PULSE
R
JA
T
A
100
o
= 135°C/W
C/W
= 25°C
16
FDS6812A Rev B (W)
JA
1
V
JA
f = 1MHz
(t)
/ t
GS
2
= 0 V
1000
1000
20