FDS6898A Fairchild Semiconductor, FDS6898A Datasheet - Page 2

• Manufacturer Part Number: FDS6898A
• Description: MOSFET N-CH DUAL 20V 9.4A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6898A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1821pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 47 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9.4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 9.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6898ATR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 78°C/W when
mounted on a 0.5in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
T
A
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
b) 125°C/W when
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
mounted on a 0.02
in
copper
= 0 V,
= 16 V,
= 12 V,
= –12 V, V
= V
= 4.5 V, I
= 2.5 V, I
= 4.5 V, I
= 4.5V,
= 5 V,
= 10 V,
= 10 V,
= 4.5 V,
= 10 V,
= 4.5 V
= 0 V,
2
pad of 2 oz
Test Conditions
GS
,
I
D
D
D
S
V
V
I
I
V
= 9.4 A
= 8.3 A
= 9.4 A,T
V
I
I
R
D
D
I
= 1.3 A
D
D
DS
DS
D
GS
GS
DS
GEN
= 9.4 A,
= 250 A
= 9.4 A
= 1 A,
= 250 A
= 0 V
= 0 V
= 0 V
= 5 V
= 0 V,
= 6
J
= 125 C
(Note 2)
Min Typ Max Units
19
0.5
20
c) 135°C/W when mounted on a
minimum mounting pad.
1821
–3.5
440
208
0.7
21
10
13
14
47
10
15
34
16
16
1
3
4
–100
100
1.5
1.3
1.2
14
18
21
20
27
55
29
23
1
FDS6898A Rev C (W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A