SI3588DV-T1-E3 Vishay, SI3588DV-T1-E3 Datasheet - Page 4
![MOSFET N/P-CH 20V 2.5/.57A 6TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3588DV-T1-E3
Manufacturer Part Number
SI3588DV-T1-E3
Description
MOSFET N/P-CH 20V 2.5/.57A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3588DV-T1-E3.pdf
(8 pages)
2.SI3588DV-T1-E3.pdf
(8 pages)
3.SI3588DV-T1-E3.pdf
(12 pages)
Specifications of SI3588DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.5A, 570mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
7.5nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.08 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.5 A @ N Channel or 0.57 A @ P Channel
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
450mV
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3588DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY
Quantity:
118
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3588DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.1
- 0.2
- 0.3
- 0.4
0.1
0.2
0.1
0.0
0.1
10
1
2
1
- 50
0.00
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
0.2
V
0
T
SD
J
I
Threshold Voltage
D
T
= 150 °C
10
0.4
- Source-to-Drain Voltage (V)
J
= 250 µA
-3
- Temperature (°C)
25
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
T
J
-2
100
= 25 °C
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10
-1
1
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
V
DM
GS
JM
0.1
- Gate-to-Source Voltage (V)
- T
A
t
1
= P
Time (s)
2
t
I
2
DM
D
S09-2275-Rev. B, 02-Nov-09
= 3.0 A
Z
thJA
Document Number: 71332
thJA
100
(t)
t
t
1
2
1
= 130 °C/W
3
4
600
10
30
5