SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet
SI3588DV-T1
Specifications of SI3588DV-T1
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SI3588DV-T1 Summary of contents
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... 2.85 mm Ordering Information: Si3588DV-T1-E3 (Lead (Pb)-free) Si3588DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si3588DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71332 S09-2275-Rev. B, 02-Nov- Si3588DV Vishay Siliconix ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 600 500 400 C iss ...
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... Si3588DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.1 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com ° ...
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... S09-2275-Rev. B, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 1 600 500 400 300 200 100 6 8 Si3588DV Vishay Siliconix ° °C 6 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C ...
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... Si3588DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Total Gate Charge (nC) g Gate Charge 150 ° 0.1 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (° ...
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... Document Number: 71332 S09-2275-Rev. B, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3588DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 130 ° ...
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TSOP: 5/6−LEAD JEDEC Part Number: MO-193C 5-LEAD TSOP D 0.08 C Dim ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec- 0.15 M ...
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... Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages ...
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AN823 Vishay Siliconix 140 − 170_C 3_C/s (max) FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, junction-to-foot thermal resistance, Rq measured for the device mounted ...
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Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 Return to Index Return to Index www.vishay.com 26 0.099 (2.510) 0.039 0.020 0.019 (1.001) (0.508) (0.493) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72610 Revision: 21-Jan-08 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...