SI6544BDQ-T1-E3 Vishay, SI6544BDQ-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI6544BDQ-T1-E3
• Description: MOSFET N/P-CH 30V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6544BDQ-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A, 3.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Source
• Resistance Drain-source Rds (on): 0.032 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A @ N Channel or 3.8 A @ P Channel
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI6544BDQ-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72244
S-81056-Rev. B, 12-May-08
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
20
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
T
J
0.3
= 150 °C
V
I
D
SD
0
= 250 µA
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
- Temperature (°C)
25
0.6
50
0.9
T
75
J
= 25 °C
0.01
100
0.1
10
100
1
0.1
1.2
Limited by R
Safe Operating Area, Junction-to-Case
* V
125
GS
> minimum V
150
1.5
V
DS
Single Pulse
DS(on)
T
C
- Drain-to-Source Voltage (V)
1
= 25 °C
*
GS
at which R
10
0.20
0.16
0.12
0.08
0.04
0.00
200
160
120
DS(on)
80
40
0
10
0
-3
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
10
100
GS
-2
- Gate-to-Source Voltage (V)
4
Time (s)
I
D
10
= 3.8 A
Vishay Siliconix
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Si6544BDQ
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www.vishay.com
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