SI6544BDQ-T1-GE3 Vishay, SI6544BDQ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI6544BDQ-T1-GE3
• Description: MOSFET N/P-CH 30V 8-TSSOP
• Manufacturer: Vishay

Specifications of SI6544BDQ-T1-GE3

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.7A, 3.8A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72244
S-81056-Rev. B, 12-May-08
0.080
0.064
0.048
0.032
0.016
0.000
10
20
16
12
8
6
4
2
0
8
4
0
0
0
0
V
I
D
DS
= 4.3 A
= 15 V
On-Resistance vs. Drain Current
V
2
1
V
4
GS
DS
Q
V
Output Characteristics
= 10 thru 5 V
g
GS
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
= 4.5 V
D
Gate Charge
- Drain Current (A)
4
2
8
4 V
12
6
3
V
GS
3 V
= 10 V
16
8
4
10
20
5
1100
1.6
1.4
1.2
1.0
0.8
0.6
880
660
440
220
20
16
12
- 50
8
4
0
0
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
GS
= 4.3 A
C
= 10 V
rss
6
V
1.0
T
GS
Transfer Characteristics
0
J
V
- Junction Temperature (°C)
DS
- Gate-to-Source Voltage (V)
1.5
- Drain-to-Source Voltage (V)
25
Capacitance
C
12
oss
2.0
T
25 °C
50
C
Vishay Siliconix
C
= 125 °C
iss
2.5
Si6544BDQ
18
75
3.0
100
www.vishay.com
3.5
- 55 °C
24
125
4.0
150
4.5
30
3