SI5903DC-T1-E3 Vishay, SI5903DC-T1-E3 Datasheet

MOSFET DUAL P-CH 20V 2.1A 1206-8

SI5903DC-T1-E3

Manufacturer Part Number
SI5903DC-T1-E3
Description
MOSFET DUAL P-CH 20V 2.1A 1206-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5903DC-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
155 mOhm @ 2.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.155 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.1 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
260mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5903DC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5903DC-T1-E3
Manufacturer:
VISHAY
Quantity:
1 294
Part Number:
SI5903DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71054
S10-0547-Rev. C, 08-Mar-10
Ordering Information: Si5903DC-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
V
DS
- 20
D
(V)
1
1206-8 ChipFET
D
1
Bottom View
D
S
2
1
D
G
Si5903DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
2
1
0.155 at V
0.180 at V
0.260 at V
S
2
1
G
R
®
2
DS(on)
J
a
= 150 °C)
Dual P-Channel 2.5 V (G-S) MOSFET
a
GS
GS
GS
= - 4.5 V
= - 3.6 V
= - 2.5 V
(Ω)
Marking Code
DA XX
a
Part # Code
a
Lot Traceability
and Date Code
b, c
A
I
= 25 °C, unless otherwise noted
± 2.9
± 2.7
± 2.2
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
G
1
P-Channel MOSFET
®
Power MOSFETs
Typical
± 2.9
± 2.1
- 1.8
5 s
2.1
1.1
50
90
30
S
D
1
1
- 55 to 150
± 12
± 10
- 20
260
G
Steady State
2
Maximum
P-Channel MOSFET
± 2.1
± 1.5
- 0.9
110
1.1
0.6
60
40
Vishay Siliconix
D
S
Si5903DC
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI5903DC-T1-E3

SI5903DC-T1-E3 Summary of contents

Page 1

... Marking Code Bottom View Ordering Information: Si5903DC-T1-E3 (Lead (Pb)-free) Si5903DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5903DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71054 S10-0547-Rev. C, 08-Mar- 2.0 2.5 3.0 ° 0.8 1.0 1.2 1.4 Si5903DC Vishay Siliconix 600 500 C iss 400 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si5903DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 0.2 0.1 0.0 - 0 Temperature ( J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords