SI5903DC-T1-E3 Vishay, SI5903DC-T1-E3 Datasheet - Page 4
![MOSFET DUAL P-CH 20V 2.1A 1206-8](/photos/5/42/54244/pkg_5547_sml.jpg)
SI5903DC-T1-E3
Manufacturer Part Number
SI5903DC-T1-E3
Description
MOSFET DUAL P-CH 20V 2.1A 1206-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI5903DC-T1-E3.pdf
(5 pages)
Specifications of SI5903DC-T1-E3
Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
155 mOhm @ 2.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.155 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.1 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
260mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5903DC-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI5903DC-T1-E3
Manufacturer:
VISHAY
Quantity:
1 294
Part Number:
SI5903DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si5903DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71054.
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.01
0.1
0.1
2
1
2
1
10
10
-4
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Single Pulse
Threshold Voltage
T
J
25
- Temperature (
Single Pulse
10
-3
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
°C)
100
10
-2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
50
40
30
20
10
10
1
0
10
-1
-4
10
-3
10
10
-2
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
10
- - T
Time (s)
-1
t
1
1
A
S10-0547-Rev. C, 08-Mar-10
= P
t
2
Document Number: 71054
DM
1
Z
thJA
100
thJA
t
t
1
2
(t)
= 90 °C/W
10
100
600
10
600