SI4944DY-T1-E3 Vishay, SI4944DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4944DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 9.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4944DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0095 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.3 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 12.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4944DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72512
S-82284-Rev. B, 22-Sep-08
0.030
0.024
0.018
0.012
0.006
0.000
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 12.2 A
0.2
On-Resistance vs. Drain Current
= 15 V
5
6
V
SD
Q
0.4
g
T
- Source-to-Drain Voltage (V)
J
10
- Total Gate Charge (nC)
I
= 150 °C
D
V
Gate Charge
- Drain Current (A)
12
GS
0.6
= 4.5 V
15
0.8
18
T
J
20
= 25 °C
1.0
V
GS
24
= 10 V
25
1.2
30
30
1.4
2400
1800
1200
0.06
0.05
0.04
0.03
0.02
0.01
0.00
600
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 12.2 A
= 10 V
6
2
I
V
V
D
DS
T
GS
0
= 3 A
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
12
4
I
D
C
50
Vishay Siliconix
C
= 12.2 A
oss
iss
18
6
75
Si4944DY
www.vishay.com
100
24
8
125
150
30
10
3