SI4944DY-T1-E3 Vishay, SI4944DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4944DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 9.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4944DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0095 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.3 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 12.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4944DY-T1-E3TR

Si4944DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10 -
- 25
4
0.02
Duty Cycle = 0.5
0.1
0.05
0.2
0
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
Single Pulse
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
= 250 µA
0.01
100
0.1
10
100
1
0.1
10 -
* Limited by
Limited
I
2
D(on)
* V
125
Single Pulse
GS
T
A
> minimum V
= 25 °C
V
150
R
DS
Square Wave Pulse Duration (s)
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10 -
1
GS
BVDSS Limited
at which R
10
DS(on)
1
50
40
30
20
10
0
0.01
I
DM
is specified
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
1
T
t
Time (s)
A
1
= P
t
S-82284-Rev. B, 22-Sep-08
2
DM
Document Number: 72512
Z
thJA
thJA
100
10
t
t
1
2
(t)
= 75 °C/W
100
600
600