SP8M2FU6TB Rohm Semiconductor, SP8M2FU6TB Datasheet - Page 2

• Manufacturer Part Number: SP8M2FU6TB
• Description: MOSFET N/P-CH 30V 3.5A 8SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M2FU6TB

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 140pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
N-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
1.0
2.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
107
140
2.5
0.8
0.8
59
93
45
30
17
−
−
−
−
−
6
6
4
−
Max.
Max.
± 10
130
150
1.2
2.5
3.5
83
−
1
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
L
= 6.4A, V
= 1mA, V
= 3.5A, V
= 3.5A, V
= 3.5A, V
= 1.75A
= 3.5A
= 8.57Ω
= 4.29Ω, R
=10Ω
= 30V, V
= 10V, I
= 10V, I
= 10V
= ± 20V, V
=0V
= 10V
15V, V
15 V
Conditions
Conditions
GS
GS
GS
GS
GS
D
D
GS
= 1mA
= 3.5A
GS
DS
G
=0V
= 10V
= 4.5V
= 4V
=0V
= 10Ω
=0V
= 5V
=0V
Rev.A
SP8M2
2/3