SP8M3FU6TB Rohm Semiconductor, SP8M3FU6TB Datasheet - Page 4

• Manufacturer Part Number: SP8M3FU6TB
• Description: MOSFET N/P-CH 30V 5A/4.5A 8SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M3FU6TB

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A, 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 5.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 82mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs: RoHS Compliant
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.051 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A, - 4.5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
N-ch
Electrical characteristic curves
0.001
1000
0.01
100
0.1
1000
10
10
100
0.01
1
Fig.4 Typical Transfer Characteristics
10
0.0
1
0.1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.5
Fig.7 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
vs. Drain-Source Voltage
0.1
1.0
DRAIN CURRENT : I
On-State Resistance
vs. Drain Current (Ι)
1.5
2.0
1
1
2.5
10
3.0
Ta=25°C
f=1MHz
V
D
V
Pulsed
V
Pulsed
GS
DS
(A)
GS
GS
=0V
DS
=10V
3.5
=10V
C
C
C
(V)
(V)
iss
oss
rss
100
4.0
10
10000
1000
1000
100
100
300
250
200
150
100
10
10
1
0.01
50
1
0.1
0
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
t
t
d (off)
d (on)
GATE-SOURCE VOLTAGE : V
Fig.8 Static Drain-Source
t
t
f
r
2
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
On-State Resistance
vs. Drain Current (ΙΙ)
4
0.1
I
I
D
D
=5A
=2.5A
6
1
8
10
1
D
D
12
Ta=25°C
V
V
R
Pulsed
V
Pulsed
(A)
(A)
Ta=25°C
Pulsed
DD
GS
G
GS
=10Ω
=15V
=10V
=4.5V
GS
14
(V)
10
10
1
6
0.01
1000
0.1
100
10
10
10
1
1
9
8
7
6
5
4
3
2
1
0
0.0
0.1
Fig.3 Dynamic Input Characteristics
0
Ta=25°C
V
I
R
Pulsed
D
SOURCE-DRAIN VOLTAGE : V
DD
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
=5A
G
Fig.9 Static Drain-Source
Fig.6 Source Current vs.
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
=10Ω
TOTAL GATE CHARGE : Qg (nC)
=15V
1
DRAIN CURRENT : I
2
On-State Resistance
vs. Drain Current (ΙΙΙ)
Source-Drain Voltage
0.5
Rev.A
3
1
4
5
SP8M3
1.0
D
6
(A)
V
Pulsed
V
Pulsed
GS
GS
SD
7
=0V
=4V
(V)
4/5
1.5
10
8