PHP225,118 NXP Semiconductors, PHP225,118 Datasheet

MOSFET P-CH 30V 2.3A SOT96-1

PHP225,118

Manufacturer Part Number
PHP225,118
Description
MOSFET P-CH 30V 2.3A SOT96-1
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PHP225,118

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
0.25 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934033490118
PHP225 /T3
PHP225 /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using vertical D-MOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
Table 1.
[1]
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
PHP225
Dual P-channel intermediate level FET
Rev. 04 — 17 March 2011
Low conduction losses due to low
on-state resistance
Motor and actuator drivers
Power management
Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same
time.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
T
T
V
T
V
V
j
sp
sp
j
GS
GS
DS
≥ 25 °C; T
= 25 °C
≤ 80 °C
= 80 °C
= -10 V; I
= -10 V; I
= -15 V; T
j
≤ 150 °C
D
D
j
= 25 °C
= -1 A;
= -2.3 A;
Suitable for high frequency
applications due to fast switching
characteristics
Synchronized rectification
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
0.22 0.25 Ω
3
Max Unit
-30
-2.3
2
-
V
A
W
nC

Related parts for PHP225,118

PHP225,118 Summary of contents

Page 1

PHP225 Dual P-channel intermediate level FET Rev. 04 — 17 March 2011 1. Product profile 1.1 General description Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET plastic package using vertical D-MOS technology. This product is designed and ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 3. Ordering information Table 3. Ordering information Type number Package Name PHP225 SO8 PHP225 Product data sheet ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V gate-source voltage GS V gate-source voltage GSO I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...

Page 4

... NXP Semiconductors 2.5 P tot (W) 2.0 1.5 1.0 0 100 Fig 1. Power derating curve 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-sp) solder point 2 10 δ j-s (K/W) 0.75 0.5 0.33 10 0.2 0.1 0.05 1 0.02 0.01 0 −1 10 −6 −5 ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance I on-state drain current DSon Dynamic characteristics Q total gate charge G(tot) Q gate-source charge ...

Page 6

... NXP Semiconductors 600 C (pF) 400 200 0 −10 0 Fig 4. Capacitance as a function of drain-source voltage; P-channel; typical values − (A) −8 −6 −4 −2 0 −2 −4 0 Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; P-channel; typical values PHP225 Product data sheet mbe144 −10 ...

Page 7

... NXP Semiconductors DSon (mΩ) (1) (2)(3) (4) ( −2 −4 0 ≥ ° DSon Fig 8. Drain-source on-state resistance as a function of drain current; typical values 1.8 k 1.6 1.4 1.2 1.0 0.8 0.6 − Typical R at: DSon ( - ( -0 -4 Fig 10. Temperature coefficient of drain-source on-state resistance; P-channel ...

Page 8

... NXP Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

Page 9

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PHP225 v.4 20110317 • Modifications: Various changes to content. PHP225 v.3 20110104 PHP225 Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 10

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Legal information .10 9.1 Data sheet status ...

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