SP8M51TB1 Rohm Semiconductor, SP8M51TB1 Datasheet

SP8M51TB1

Manufacturer Part Number

SP8M51TB1

Description

MOSFET N/P-CH 100V SOP8

Manufacturer

Rohm Semiconductor

Datasheet

1.SP8M51TB1.pdf (1 pages)

Specifications of SP8M51TB1

Fet Type

N and P-Channel

Fet Feature

Standard

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

3A, 2.5A

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOP

Transistor Polarity

N and P-Channel

Drain-source Breakdown Voltage

100 V

Continuous Drain Current

3 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Vgs(th) (max) @ Id

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

SP8M51TB1TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SP8M51TB1

Manufacturer:

ROHM/罗姆

Quantity:

20 000

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SP8M51 | Complex Transistors | Transistors | Discrete Semiconductors | ROHM CO., LTD.

http://www.rohm.com/products/discrete/transistor/complex_mos-mos/sp8m51/

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HOME, Products > Discrete Semiconductors > Transistors > Complex Transistors > SP8M51

Terms & Conditions

[ Product description ]

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the

micro-processing technologies useful for wide range of applications.Broad

lineup covering compact types, high-power types and complex types to meet

various needs in the market.

• 4V-drive type Nch+Pch Middle-power MOSFET

*1 Active: Production or current type Preparation: Preliminary type Preview: Development type

*2 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

Drain-Source voltage V

Gate-Source voltage V

Drain current(continuous) I

(A)

Source current(body Di) I

Total power dissipation P

Channel temperature Tch(ºC)

Storage temperature Tstg(ºC)

Drain-Source voltage V

Gate-Source voltage V

Drain current(continuous) I

(A)

Source current(body Di) I

Total power dissipation P

Channel temperature Tch(ºC)

Storage temperature Tstg(ºC)

SP8M51TB

4V Drive Nch+Pch MOSFET

SP8M51

Please check the details on

Features

Product specifications

Status Product

Others

Part No.

Data Sheet

Rated parameters

Reliability information

NEW

Absolute maximum ratings (Ta=25ºC)

SOP8

Package

GSS

DSS

(A)

(W)

(V)

"Product List"

Standard

-55 to +150

value

Status

Active

for Others.

-100

±2.5

100

±20

150

±20

150

±3

-1

Operation notes

Mounted on a ceramic

board

Mounted on a ceramic

board

RoHS

Yes

Conditions

Packing

Taping

style

*The contents described here are just outline for introduction.

Please obtain the specification sheets from us for thorough check before use.

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Design Model

Package

quantity

2500

Condition of soldering

Outline

SOP8

Dimensions

* Click to enlarge.

Equivalent circuit diagram

Samples

Sales

Inquiry

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transistors

Shopping

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Operation notes

Pant No. explanation

Package

Taping specifications

Soldering conditions

Storage conditions

Explanation of symbols

FAQ

ROHM Internet Direct

RoHS directive compliance

Transistors

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