SP8M9FU6TB Rohm Semiconductor, SP8M9FU6TB Datasheet - Page 3

• Manufacturer Part Number: SP8M9FU6TB
• Description: MOSFET N/P-CH 30V 9A/5A 8SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M9FU6TB

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A, 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
P-ch
Pulsed
Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
Min.
Min.
4.5
1.0
30
1400
Typ.
Typ.
300
230
3.5
6.5
30
40
45
15
30
80
40
16
Max.
Max.
42
56
63
2.5
1.2
10
1
Unit
Unit
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
A
A
V
I
V
V
I
I
I
I
V
V
f 1MHz
I
V
R
R
V
V
I
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GS
GS
L
G
DD
GS
6
10
1.6A, V
1mA, V
5.0A, V
2.5A, V
2.5A, V
2.5A, V
2.5A, V
5.0A
0V
30V, V
10V, I
10V
20V, V
10V
5V
15V
Conditions
Conditions
GS
GS
GS
DS
DD
GS
GS
D
GS
DS
0V
0V
1mA
0V
0V
10V
4.5V
4.0V
10V
15V
SP8M9
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