IRF7507TRPBF International Rectifier, IRF7507TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7507TRPBF
• Description: MOSFET N/P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7507TRPBF

• Package / Case: Micro8™
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.4A, 1.7A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 140 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 5.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 5. Normalized On-Resistance
0.01
100
100
0.1
2.0
1.5
1.0
0.5
0.0
0.1
10
10
1
1
0.1
1.5
-60
TOP
BOTTOM 1.5V
T = 1 5 0 °C
I
D
J
-40
= 1.7A
T , Junction Tem perature (°C )
V
V
-20
J
G S
7.5V
D S
VGS
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
2.0
Vs. Temperature
T = 2 5 °C
J
, D rain-to-S ourc e V oltage (V )
, G a te -to -S o u rce V o lta g e (V )
0
20
2.5
40
1
60
V
2 0 µ s P U L S E W ID T H
20µ s P U LS E W ID TH
T = 25°C
1.5V
3.0
D S
J
80
= 1 0 V
100 120 140 160
V
G S
3.5
= 4.5 V
10
4.0
A
A
A
N - Channel
Fig 6. Typical On-Resistance Vs. Drain
Fig 2. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
0.01
1 0 0
100
0.1
0.1
1 0
0.8
0.6
0.4
0.2
0.0
10
1
1
0.4
0.1
0
TOP
BOTTOM 1.5V
T = 150°C
V
J
G S
0.6
V
= 5.0V
V
D S
S D
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
Forward Voltage
, D rain-to-S ource Voltage (V )
, Sourc e-to-D rain V oltage (V )
0.8
I , D ra in C urren t (A )
D
Current
T = 25°C
2
J
V
1.0
G S
1
= 2.5V
1.2
20µ s P U LS E W ID TH
T = 150°C
J
IRF7507
1.5V
4
1.4
V
G S
1.6
= 0V
10
1.8
6
A
A
A
3