IRF7507TRPBF International Rectifier, IRF7507TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7507TRPBF
• Description: MOSFET N/P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7507TRPBF

• Package / Case: Micro8™
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.4A, 1.7A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 140 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 5.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7507
Fig 7. Typical On-Resistance Vs. Gate
4
Fig 9. Typical Capacitance Vs.
0.13
0.11
0.09
0.07
0.05
500
400
300
200
100
0
1
2
Drain-to-Source Voltage
C
C
C
V
V
iss
oss
rss
G S
3
D S
V
C
C
C
, D rain-to-S ource V oltage (V )
, G ate-to-S ource V oltage (V )
G S
is s
rs s
o ss
Voltage
4
= 0V ,
= C
= C
= C
I
D
gs
g d
ds
= 2.4 A
+ C
+ C
10
5
g d
gd
f = 1M H z
, C
6
d s
S H O R TE D
7
100
8
A
A
N - Channel
Fig 8. Maximum Safe Operating Area
100
0.1
Fig 10. Typical Gate Charge Vs.
10
10
8
6
4
2
0
1
0
1
I
V
T
T
Single Pulse
D
D S
C
J
= 1.7A
= 25 C
= 150 C
Gate-to-Source Voltage
= 16V
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total G ate C harge (nC )
2
°
G
, Drain-to-Source Voltage (V)
4
BY R
10
DS(on)
FO R TE S T C IR C U IT
6
S E E F IG U R E 9
10us
100us
1ms
10ms
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8
100
10
A