IRF7338TRPBF International Rectifier, IRF7338TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7338TRPBF
• Description: MOSFET N/P-CH 12V 6.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7338TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 6.3A, 3A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
100
1
10
1
0.1
TOP
BOTTOM -1.5V
1.0
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.0V
-V DS , Drain-to-Source Voltage (V)
-7.5V
T J = 25°C
VGS
-V GS , Gate-to-Source Voltage (V)
2.0
T J = 150°C
1
20µs PULSE WIDTH
Tj = 25°C
V DS = -10V
20µs PULSE WIDTH
-1.5V
3.0
10
4.0
100.0
10.0
100
0.1
1.0
0.1
10
1
0.1
0.4
TOP
BOTTOM -1.5V
T J = 150°C
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.0V
-V DS , Drain-to-Source Voltage (V)
-7.5V
-V SD , Source-toDrain Voltage (V)
0.6
VGS
0.8
T J = 25°C
1.0
1
IRF7338
20µs PULSE WIDTH
Tj = 150°C
-1.5V
1.2
V GS = 0V
1.4
1.6
7
10