IRF7338TRPBF International Rectifier, IRF7338TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7338TRPBF
• Description: MOSFET N/P-CH 12V 6.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7338TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 6.3A, 3A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7338
8
0.12
0.10
0.08
0.06
2.0
1.5
1.0
0.5
0.0
-60
2.0
I
D
=
-40
-3.0A
-V GS, Gate -to -Source Voltage (V)
3.0
-20
T , Junction Temperature
J
0
4.0
20
40
5.0
60
I D = -3.0A
80
6.0
100
( C)
V
°
120
GS
7.0
=
140
-4.5V
160
8.0
80
60
40
20
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0
0.00
0
0.00
2
V GS = -2.7V
-I D , Drain Current (A)
0.00
4
Time (sec)
6
0.01
8
V GS = -4.5V
0.10
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10
1.00
12
10.00
14