IRF7380TRPBF International Rectifier, IRF7380TRPBF Datasheet

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IRF7380TRPBF

Manufacturer Part Number

IRF7380TRPBF

Description

MOSFET N-CH 80V 3.6A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7380TRPBF.pdf (8 pages)

Specifications of IRF7380TRPBF

Package / Case

8-SOIC (3.9mm Width)

Mounting Type

Surface Mount

Power - Max

2W

Fet Type

2 N-Channel (Dual)

Gate Charge (qg) @ Vgs

23nC @ 10V

Vgs(th) (max) @ Id

4V @ 250µA

Current - Continuous Drain (id) @ 25° C

3.6A

Drain To Source Voltage (vdss)

80V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

73 mOhm @ 2.2A, 10V

Configuration

Dual

Transistor Polarity

Dual N-Channel

Drain-source Breakdown Voltage

80 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

3.6 A

Power Dissipation

2 W

Mounting Style

SMD/SMT

Gate Charge Qg

15 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IRF7380TRPBF

Manufacturer:

IR

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRF7380TRPBF

0

Company:

H&T Electronics

H&T Electronics

Part Number:

IRF7380TRPBF

Quantity:

9 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRF7380TRPBF

Quantity:

42 500

Current page: 1 of 8
Download datasheet (137Kb)

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Benefits

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Applications

www.irf.com

V

V

I

I

I

P

dv/dt

T

T

R

R

Notes through † are on page 8

Absolute Maximum Ratings

Thermal Resistance

D

D

DM

J

STG

DS

GS

D

θJL

θJA

@ T

@ T

Effective C

App. Note AN1001)

and Current

High frequency DC-DC converters

Lead-Free

Low Gate to Drain Charge to Reduce

Fully Characterized Capacitance Including

Fully Characterized Avalanche Voltage

Switching Losses

@T

A

A

A

= 25°C

= 100°C

= 25°C

OSS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Junction-to-Drain Lead

Junction-to-Ambient (PCB Mount) *

to Simplify Design, (See

Parameter

Parameter

e

GS

GS

@ 10V

@ 10V

V

80V

DSS

G2

G1

S2

S1

1

2

3

4

Top View

73m @V

Typ.

–––

–––

R

-55 to + 150

HEXFET

DS(on)

IRF7380PbF

8

7

6

5

Max.

3.6

± 20

0.02

2.9

2.0

2.3

80

29

h

D1

D1

D2

D2

GS

max

®

Max.

20

50

= 10V 3.6A

Power MOSFET

SO-8

Units

Units

W/°C

°C/W

V/ns

°C

W

V

A

I

08/10/04

D

1

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