IRF7380TRPBF International Rectifier, IRF7380TRPBF Datasheet - Page 6
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IRF7380TRPBF
Manufacturer Part Number
IRF7380TRPBF
Description
MOSFET N-CH 80V 3.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7380TRPBF.pdf
(8 pages)
Specifications of IRF7380TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
23nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
3.6A
Drain To Source Voltage (vdss)
80V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
73 mOhm @ 2.2A, 10V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
3.6 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7380TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7380PbF
I
AS
12V
Fig 14a&b. Basic Gate Charge Test Circuit
Fig 15a&b. Unclamped Inductive Test circuit
6
V
GS
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
95
90
85
80
75
70
65
60
55
50
50KΩ
3mA
t p
Current Sampling Resistors
0
.3µF
I
G
V
(BR)DSS
D.U.T.
5
and Waveform
I
D
and Waveforms
I D , Drain Current (A)
+
-
V
DS
10
V
V GS = 10V
GS
R G
20V
V DS
15
V
t p
G
Q
I AS
GS
D.U.T
0.01 Ω
L
20
Q
Charge
Q
GD
G
25
15V
DRIVER
+
-
30
V DD
A
Fig 13. On-Resistance Vs. Gate Voltage
200
160
120
80
40
800
700
600
500
400
300
200
100
0
25
0
Fig 15c. Maximum Avalanche Energy
3.0
Starting T
V GS, Gate -to -Source Voltage (V)
50
5.0
Vs. Drain Current
J
, Junction Temperature (°C)
7.0
75
I D = 3.6A
9.0
100
TOP
BOTTOM
11.0
www.irf.com
°
125
13.0
1.0A
1.8A
2.2A
I D
15.0
150