IRF7380TRPBF International Rectifier, IRF7380TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7380TRPBF
• Description: MOSFET N-CH 80V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7380TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Drain To Source Voltage (vdss): 80V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7380PbF
I
AS
12V
Fig 14a&b. Basic Gate Charge Test Circuit
Fig 15a&b. Unclamped Inductive Test circuit
6
V
GS
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
95
90
85
80
75
70
65
60
55
50
50KΩ
3mA
t p
Current Sampling Resistors
0
.3µF
I
G
V
(BR)DSS
D.U.T.
5
and Waveform
I
D
and Waveforms
I D , Drain Current (A)
+
-
V
DS
10
V
V GS = 10V
GS
R G
20V
V DS
15
V
t p
G
Q
I AS
GS
D.U.T
0.01 Ω
L
20
Q
Charge
Q
GD
G
25
15V
DRIVER
+
-
30
V DD
A
Fig 13. On-Resistance Vs. Gate Voltage
200
160
120
80
40
800
700
600
500
400
300
200
100
0
25
0
Fig 15c. Maximum Avalanche Energy
3.0
Starting T
V GS, Gate -to -Source Voltage (V)
50
5.0
Vs. Drain Current
J
, Junction Temperature (°C)
7.0
75
I D = 3.6A
9.0
100
TOP
BOTTOM
11.0
www.irf.com
°
125
13.0
1.0A
1.8A
2.2A
I D
15.0
150