IRF7380PBF International Rectifier, IRF7380PBF Datasheet - Page 3
![MOSFET 2N-CH 80V 3.6A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7380PBF
Manufacturer Part Number
IRF7380PBF
Description
MOSFET 2N-CH 80V 3.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7380PBF.pdf
(8 pages)
Specifications of IRF7380PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
73 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF7380PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7380PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.001
Fig 3. Typical Transfer Characteristics
0.01
100
Fig 1. Typical Output Characteristics
100
0.1
10
10
1
0
1
3.0
0.1
T J = 150°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.0
1
T J = 25°C
3.7V
V DS = 15V
20µs PULSE WIDTH
5.0
10
20µs PULSE WIDTH
Tj = 25°C
TOP
BOTTOM
6.0
100
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
1000
7.0
100
Fig 2. Typical Output Characteristics
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
-60
Fig 4. Normalized On-Resistance
0.1
I
D
=
-40
3.6A
V DS , Drain-to-Source Voltage (V)
-20
Vs. Temperature
T
1
J
0
, Junction Temperature (°C)
IRF7380PbF
20
3.7V
40
10
20µs PULSE WIDTH
Tj = 150°C
60
80
TOP
BOTTOM
100
100
V
120
GS
=
140
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
10V
3
1000
160