IRF7380PBF International Rectifier, IRF7380PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7380PBF
• Description: MOSFET 2N-CH 80V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7380PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF7380PBF

IRF7380PbF
100000
10000
4
1000
100
10
1
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.0
1
T = 150
Drain-to-Source Voltage
J
V DS , Drain-to-Source Voltage (V)
V
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
SD
°
Forward Voltage
C
0.5
, Source-to-Drain Voltage (V)
f = 1 MHZ
1.0
10
T = 25
J
°
C rss
C
C oss
C iss
1.5
V
GS
= 0 V
2.0
100
12
10
100
0.1
8
6
4
2
0
10
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
I D = 2.1A
Tc = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
2
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
4
10
6
V DS = 64V
V DS = 40V
V DS = 16V
8
10
100
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100µsec
10msec
1msec
12
14
1000
16