IRF7380PBF International Rectifier, IRF7380PBF Datasheet - Page 4
![MOSFET 2N-CH 80V 3.6A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7380PBF
Manufacturer Part Number
IRF7380PBF
Description
MOSFET 2N-CH 80V 3.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7380PBF.pdf
(8 pages)
Specifications of IRF7380PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
73 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF7380PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7380PBF
Manufacturer:
IR
Quantity:
20 000
IRF7380PbF
100000
10000
4
1000
100
10
1
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.0
1
T = 150
Drain-to-Source Voltage
J
V DS , Drain-to-Source Voltage (V)
V
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
SD
°
Forward Voltage
C
0.5
, Source-to-Drain Voltage (V)
f = 1 MHZ
1.0
10
T = 25
J
°
C rss
C
C oss
C iss
1.5
V
GS
= 0 V
2.0
100
12
10
100
0.1
8
6
4
2
0
10
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
I D = 2.1A
Tc = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
2
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
4
10
6
V DS = 64V
V DS = 40V
V DS = 16V
8
10
100
www.irf.com
100µsec
10msec
1msec
12
14
1000
16