IRF7750TRPBF International Rectifier, IRF7750TRPBF Datasheet - Page 2
IRF7750TRPBF
Manufacturer Part Number
IRF7750TRPBF
Description
MOSFET P-CH DUAL 20V 4.7A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7750TRPBF.pdf
(8 pages)
Specifications of IRF7750TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 5V
Input Capacitance (ciss) @ Vds
1700pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.7 A
Power Dissipation
1 W
Mounting Style
SMD/SMT
Gate Charge Qg
26 nC
Module Configuration
Dual
Continuous Drain Current Id
4.7A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7750TRPBF
IRF7750TRPBFTR
IRF7750TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7750TRPBF
Manufacturer:
ST
Quantity:
1 200
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
(BR)DSS
max. junction temperature.
2
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t<10 sec
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1700 –––
–––
–––
–––
––– 0.012 –––
–––
-20
11
–––
–––
––– 0.030
––– 0.055
–––
–––
–––
–––
180
380
270
––– -100
210
3.9
8.0
26
16
26
15
54
-1.2
–––
-1.2
–––
-1.0
100
–––
–––
–––
–––
–––
–––
-38
-25
5.8
-1.0
39
24
39
12
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
Ω
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -4.7A
= -1.0A
= 25°C, I
= 25°C, I
= 10Ω
= 24Ω
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -20V, V
= -16V, V
= -12V
= 12V
= -16V
= -5.0V
= -10V
= 0V
= -15V
GS
Conditions
, I
D
S
F
D
Conditions
D
= -250µA
= -1.0A, V
= -1.0A
D
D
GS
GS
= -250µA
= -4.7A
= -4.7A
= -3.8A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S