IRF7324PBF International Rectifier, IRF7324PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7324PBF
• Description: MOSFET 2P-CH 20V 9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7324PBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 5V
• Input Capacitance (ciss) @ Vds: 2940pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.018Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 9A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF7324PBF

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IRF7324PbF
Source-Drain Ratings and Characteristics
Notes:
‚
ƒ
Electrical Characteristics @ T
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
DSS
2
fs
SD
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
Surface mounted on FR-4 board, ≤ 10sec
Pulse width ≤ 300µs duty cycle ≤
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
––– -0.02 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2940 –––
–––
–––
-20
19
–––
180
300
–––
––– 0.018
––– 0.026
–––
–––
–––
––– -100
–––
170
190
630
420
7.1
42
12
17
36
-1.2
450
270
-1.0
-1.0
–––
–––
100
–––
–––
–––
–––
–––
–––
-71
-25
63
11
18
2.0
V/°C
nC
nC
ns
pF
V
V
Ω
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -9.0A
= -1.0A
= 25°C, I
= 25°C, I
= 10Ω
= 6.0Ω
= V
= -10V, I
= -16V, V
= -16V, V
= -16V
= -15V
= 0V, I
= -4.5V, I
= -2.5V, I
= -12V
= 12V
= -5.0V
= -10V
= 0V
GS
Conditions
‚
, I
D
S
F
D
Conditions
= -250µA
D
= -2.0A, V
= -2.0A
D
D
GS
GS
= -250µA
= -9.0A
= -9.0A
= -7.7A
‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
‚
‚
J
G
= 125°C
= 0V
‚
S
D