IRF7324PBF International Rectifier, IRF7324PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7324PBF
• Description: MOSFET 2P-CH 20V 9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7324PBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 5V
• Input Capacitance (ciss) @ Vds: 2940pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.018Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 9A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF7324PBF

IRF7324PbF
4
100
5000
4000
3000
2000
1000
0.1
10
1
0.2
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
Drain-to-Source Voltage
J
0.4
-V
-V
SD
DS
°
,Source-to-Drain Voltage (V)
Forward Voltage
0.6
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
T = 25 C
0.8
0V,
C
C
C
J
C iss
C oss
C rss
gs
gd
ds
+ C
+ C
10
°
1.0
f = 1MHz
gd ,
gd
C
1.2
ds
V
GS
SHORTED
1.4
= 0 V
1.6
100
1000
100
Fig 8. Maximum Safe Operating Area
10
10
8
6
4
2
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
-9.0A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
10
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
www.irf.com
40
10
V
DS
=-16V
10us
100us
1ms
10ms
50
100
60