GWM120-0075X1-SL IXYS, GWM120-0075X1-SL Datasheet - Page 4

• Manufacturer Part Number: GWM120-0075X1-SL
• Description: IC FULL BRIDGE 3PH ISOPLUS STRT
• Manufacturer: IXYS

Specifications of GWM120-0075X1-SL

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 115nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Through Hole
• Vdss, Max, (v): 75
• Id25, Tc = 25°c, (a): 110
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): 85
• Rds(on), Max, Tj = 25°c, (mohms): 4.9
• Tf, Typ, (ns): 100
• Tr, Typ, (ns): 100
• Rthjc, Max, (ºc/w): 1.0
• Package Style: ISOPLUS-DIL™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
300
250
200
150
100
2,0
1,6
1,2
0,8
0,4
1,2
1,1
1,0
0,9
0,8
0,7
50
0
-25
-25
0
Fig. 1 Drain source breakdown voltage V
Fig. 3 Typical output characteristic
Fig. 5 Drain source on-state resistance R
R
V
20 V
15 V
10 V
V
I
DS(on)
GS
D
I
GE
DSS
= 125 A
=
= 10 V
0
0
= 0.25 mA
normalized
1
vs. junction temperature T
versus junction temperature T
25
25
7 V
2
50
50
V
T
T
DS
J
J
3
[°C]
[°C]
[V]
75
75
6.5 V
4
100
100
VJ
T
J
= 25°C
125
125
5
J
R
DS(on)
5.5 V
4.5 V
DSS
6 V
5 V
4 V
DS(on)
150
150
6
12
10
8
6
4
2
250
200
150
100
300
250
200
150
100
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
50
50
0
0
0
0
0
4 V 4.5 V
Fig. 2 Typical transfer characteristic
Fig. 4 Typical output characteristic
Fig. 6 Drain source on-state
1
50
1
resistance R
V
20 V
15 V
5 V
GS
GWM 120-0075X1
2
=
100
2
V
T J = 125°C
5.5 V
DS
10 V
3
V
= 30 V
V
I
DS(on)
GS
D
150
DS
3
[A]
[V]
[V]
6 V
versus I
4
7 V
200
4
6.5 V
T J = 25°C
5
D
T J = 125°C
T J = 125°C
V
I
D
250
GS
5
= 125 A
10 V
6
7 V
= 10 V
6.5 V
5.5 V
4.5 V
20110407d
15 V
20 V
4 V
5 V
6 V
300
4 - 6
7
6