TPCF8302(TE85L,F) Toshiba, TPCF8302(TE85L,F) Datasheet - Page 6
![MOSFET PCH 20V 3A VS-8](/photos/5/45/54504/tpc8302_te85l_f__sml.jpg)
TPCF8302(TE85L,F)
Manufacturer Part Number
TPCF8302(TE85L,F)
Description
MOSFET PCH 20V 3A VS-8
Manufacturer
Toshiba
Datasheet
1.TPCF8302TE85LF.pdf
(7 pages)
Specifications of TPCF8302(TE85L,F)
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
59 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
11nC @ 5V
Input Capacitance (ciss) @ Vds
800pF @ 10V
Power - Max
530mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1B)
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.059 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
10 V
Continuous Drain Current
3 A
Power Dissipation
1.35 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TPCF8302(TE85L,F)
TPCF8302FTR
TPCF8302FTR
100
0.1
10
1
0.1
※ Single pulse
Curves must be derated linearly with
increase in temperature.
I D max (pulse) *
Ta=25℃
Drain-source voltage V DS (V)
1000
100
10
1
Safe Operating Area
0.001
1
Single pulse
1 ms *
0.01
10
100 µs *
V DSS max
0.1
100
Pulse width
r
6
th
– t
1
w
t w (s)
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10
100
(2)
(3)
(1)
1000
TPCF8302
2006-11-16