NTJD4152PT1G ON Semiconductor, NTJD4152PT1G Datasheet - Page 2

• Manufacturer Part Number: NTJD4152PT1G
• Description: MOSFET 2P-CH 20V 880MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4152PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 880mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 155pF @ 20V
• Power - Max: 272mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.88 A
• Power Dissipation: 272 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 880mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 215mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.26Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4152PT1GOSTR

3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Parameter
V
(T
Symbol
Q
V
R
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
d(ON)
DS(on)
V
J
g
GSS
DSS
OSS
=25°C unless otherwise stated)
RSS
ISS
t
FS
GS
GD
t
SD
r
f
V
GS
= 0 V, V
http://onsemi.com
V
V
V
V
V
I
V
V
V
S
GS
GS
V
V
V
V
GS
GS
GS
NTJD4152P
DS
I
GS
GS
= -0.48 A
DS
D
GS
GS
DS
= -4.5 V, V
= -4.5 V, V
= -0.5 A, R
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -10 V, I
= 0 V,
Test Condition
= V
= 0 V, V
= 0 V, I
= 0 V, V
= 0 V, f = 1.0 MHz,
DS
V
I
D
DS
DS
2
= -0.88 A
= -16 V
, ID = -250 mA
= -20 V
D
GS
GS
D
= -250 mA
D
D
D
DS
DD
G
= -0.88 A
= ±4.5 V
= -0.88 A
= -0.71 A
= -0.20 A
= ±12 V
= 20 W
= -10 V,
= -10 V,
T
T
T
T
J
J
J
J
= 125°C
= 125°C
= 25°C
= 25°C
-0.45
Min
-20
-0.66
0.03
0.65
13.5
-0.8
Typ
215
345
600
155
1.0
6.0
3.0
2.2
0.5
5.8
6.5
3.5
25
18
1000
Max
-1.2
260
500
1.0
5.0
1.0
Unit
mW
mA
mA
nC
pF
ns
V
V
S
V