UPA679TB-T1-A Renesas Electronics America, UPA679TB-T1-A Datasheet - Page 6

• Manufacturer Part Number: UPA679TB-T1-A
• Description: MOSFET N/P-CH 20V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA679TB-T1-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 570 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA, 250mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 28pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

TYPICAL CHARACTERISTICS
(1) N-ch PART (T
4
1.4
1.2
0.8
0.6
0.4
1.4
1.2
0.8
0.6
0.4
0.2
120
100
1
0
1
80
60
40
20
- 50
0
0
0
Pulsed
GATE CUT-OFF VOLTAGE vs. CHANNEL
TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
V
25
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
T
T
ch
A
0.4
- Drain to Source Voltage - V
0
- Ambient Temperature - °C
- Channel Temperature - °C
50
A
= 25°C)
75
0.8
50
100
V
I
D
DS
= 1.0 m A
V
125
100
1.2
GS
= 10.0 V
= 4.5 V
4.0 V
2.5 V
150
1.6
150
Data Sheet G16615EJ1V0DS
175
0.0001
0.01
0.001
0.1
0.24
0.16
0.12
0.08
0.04
0.01
10
0.2
0.1
1
0.001
10
0
1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
FORWARD TRANSFER CHARACTERISTICS
0
0
T
V
Pulsed
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
V
Pulsed
A
DS
DS
= −25°C
25
= 10.0 V
125°C
T
= 10.0 V
0.5
25°C
75°C
V
A
0.01
GS
- Ambient Temperature - °C
I
- Gate to Source Voltage - V
50
D
- Drain Current - A
Mounted on FR-4 board of
2500 m m
2 units total
1
75
0.1
1.5
100
2
x 1.1 m m
T
A
2
125
= 125°C
1
µ µ µ µ PA679TB
−25°C
75°C
25°C
2.5
150
10
175
3