NTGD4167CT1G ON Semiconductor, NTGD4167CT1G Datasheet - Page 3

• Manufacturer Part Number: NTGD4167CT1G
• Description: MOSFET N/P-CH 30V DUAL 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGD4167CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 295pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
Symbol
J
Q
Q
V
t
t
RR
RR
t
t
t
t
= 25°C unless otherwise noted)
SD
RR
RR
a
b
a
b
N/P
N
P
N
P
http://onsemi.com
V
GS
3
dI
= 0 V, T
dI
S
S
/ dt = 100 A/ms, I
/ dt = 100 A/ms, I
Test Conditions
J
V
V
= 25 °C
GS
GS
= 0 V,
= 0 V,
S
S
= −0.9 A
= 0.9 A
I
I
S
S
= −0.9 A
= 0.9 A
Min
−0.8
Typ
0.7
8.0
5.0
3.0
3.0
2.0
7.0
12
10
Max
−1.2
1.2
Unit
nC
nC
ns
ns
V