NTLJD3115PT1G ON Semiconductor, NTLJD3115PT1G Datasheet - Page 2

• Manufacturer Part Number: NTLJD3115PT1G
• Description: MOSFET P-CHAN DUAL 20V 6-WDFN
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTLJD3115PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 531pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 3.3A
• Power Dissipation: 1.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: WDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTLJD3115PT1G; NTLJD3115PT1GOSTR

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm
THERMAL RESISTANCE RATINGS
SINGLE OPERATION (SELF−HEATED)
DUAL OPERATION (EQUALLY HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
Parameter
http://onsemi.com
2
2
, 2 oz Cu).
Symbol
R
R
R
R
R
R
qJA
qJA
qJA
qJA
qJA
qJA
Max
177
133
83
54
58
40
°C/W
°C/W
Unit