NTLJD3115PT1G ON Semiconductor, NTLJD3115PT1G Datasheet - Page 6

• Manufacturer Part Number: NTLJD3115PT1G
• Description: MOSFET P-CHAN DUAL 20V 6-WDFN
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTLJD3115PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 531pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 3.3A
• Power Dissipation: 1.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: WDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTLJD3115PT1G; NTLJD3115PT1GOSTR

1000
100
0.000001
0.1
10
1
0.05
0.02
0.01
D = 0.5
0.2
0.1
0.00001
SINGLE PULSE
TYPICAL PERFORMANCE CURVES
0.0001
0.001
Figure 12. Thermal Response
http://onsemi.com
0.01
t, TIME (s)
6
P
(pk)
DUTY CYCLE, D = t
(T
t
J
1
0.1
= 25°C unless otherwise noted)
t
2
1
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
− T
10
A
*See Note 2 on Page 1
= P
(pk)
1
R
qJA
100
(t)
1000