AOD606 Alpha & Omega Semiconductor Inc, AOD606 Datasheet - Page 7

• Manufacturer Part Number: AOD606
• Description: MOSFET N/P-CH COMPL 40V TO252-4
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD606

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 404pF @ 20V
• Power - Max: 20W, 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1118-2

AOD606
Alpha & Omega Semiconductor, Ltd.
P-Channel MOSFET Electrical Characteristics (T
30
25
20
15
10
5
0
80
70
60
50
40
30
20
120
100
2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01
80
60
40
20
0
Figure 5: On-Resistance vs. Gate-Source Voltage
0
-10V
-6V
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics
1
25°C
4
V
GS
=-4.5V
Gate Voltage
-V
-5V
2
-V
8
GS
DS
-I
-3V
D
(Volts)
(Volts)
(A)
I
12
D
3
=-10mA, V
V
GS
=-10V
I
V
D
125°C
16
=-8A
GS
4
-3.5V
-4.5V
=-4V
GS
=0V
20
J
=25° C unless otherwise noted)
5
1.80
1.60
1.40
1.20
1.00
0.80
25
20
15
10
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
5
0
0
0
0.0
Figure 4: On-Resistance vs. Junction
25
Figure 2: Transfer Characteristics
1
Figure 6: Body-Diode Characteristics
0.2
50
125°C
Temperature (°C)
Temperature
2
-V
V
75
0.4
V
I
D
DS
GS
GS
=-8A
125°C
-V
=-5V
=-10V
(Volts)
SD
100
0.6
(Volts)
3
25°C
125
25°C
V
I
0.8
D
GS
=-6A
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=-4.5V
4
150
1.0
175
5
1.2