BSO615C G Infineon Technologies, BSO615C G Datasheet - Page 9

• Manufacturer Part Number: BSO615C G
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615C G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 110 m Ohms / 300 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.1 A-2.0 A
• Idpuls (max): 12.4 A-8.0 A
• Rds (on) (max) (@10v): 110.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615C; BSO615C G; BSO615CGT; BSO615CGXT; BSO615CINTR; SP000216311

Drain-source on-resistance (N-Ch.)
R
parameter : I
Gate threshold voltage (N-Ch.)
V
parameter: V
GS(th)
DS(on)
W
0.30
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
V
V
V
V
3.0
3.0
3.0
3.0
2.5
2.5
2.5
2.5
2.2
2.2
2.2
2.2
2.0
2.0
2.0
2.0
1.8
1.8
1.8
1.8
1.5
1.5
1.5
1.5
1.2
1.2
1.2
1.2
1.0
1.0
1.0
1.0
0.8
0.8
0.8
0.8
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.0
0.0
0.0
0.0
-60
-60
-60
-60
-60
BSO 615 C
= f ( T j )
= f ( T
-20
-20
-20
-20
-20
D
GS
j
)
= 3.1 A , V
= V
20
98%
20
20
20
20
typ
DS
98%
2%
typ
, I
60
D
60
60
60
60
GS
= 20 µA
100
= 10 V
100
100
100
100
°C
Rev. 2.0
°C
°C
°C
°C
T
T
T
T
T
j
j
j
j
j
180
160
160
160
160
Page 9
Drain-source on-resistance (P-Ch.)
R
parameter : I
Gate threshold voltage (P-Ch.)
V
parameter: V
DS(on)
GS(th)
0.80
W
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-3.0
-3.0
-3.0
-3.0
V
V
V
V
-2.5
-2.5
-2.5
-2.5
-2.2
-2.2
-2.2
-2.2
-2.0
-2.0
-2.0
-2.0
-1.8
-1.8
-1.8
-1.8
-1.5
-1.5
-1.5
-1.5
-1.2
-1.2
-1.2
-1.2
-1.0
-1.0
-1.0
-1.0
-0.8
-0.8
-0.8
-0.8
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
0.0
0.0
0.0
0.0
-60
-60
-60
-60
-60
BSO 615 C
= f ( T j )
= f ( T
-20
-20
-20
-20
-20
D
GS
j
)
= -2 A , V
= V
20
98%
20
20
20
20
typ
DS
98%
2%
typ
, I
60
D
GS
60
60
60
60
= -450 µA
= -10 V
100
BSO 615 C G
100
100
100
100
2006-08-25
°C
°C
°C
°C
°C
T
T
T
T
T
j
j
j
j
j
180
160
160
160
160