BSO303P Infineon Technologies, BSO303P Datasheet - Page 3

MOSFET P-CHAN DUAL 30V DSO-8

BSO303P

Manufacturer Part Number
BSO303P
Description
MOSFET P-CHAN DUAL 30V DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO303P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.2A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
72.5nC @ 10V
Input Capacitance (ciss) @ Vds
1761pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
32 m Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 8.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO303PNT
BSO303PT
SP000012622

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO303P
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO303P H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev.1.2
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Page 3
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-6.6A
=-1A, R
DS
=25°C
=-15V, |I
/dt=100A/µs
=0, V
=-15V, V
=-24V, I
=-24V, I
=0 to -10V
=-24V, I
=0, |I F | = |I D |
ç≥2*çI
Conditions
DS
G
D
=6Ω
F
D
D
D
ç*R
=-25V,
|
GS
=-8.2A
=-8.2A,
=-8.2A
=
DS(on)max
|l
=-10V,
D
|,
min.
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1761
-4.25
-15.2
-48.3
-0.88
10.6
12.9
55.4
39.3
24.4
12.8
typ.
495
410
-2.4
22
-
-
2002-01-08
max.
BSO303P
-72.5
-32.4
-1.32
15.9
19.3
83.1
36.6
19.2
-6.4
-2.2
-23
59
-
-
-
-
-
Unit
S
pF
ns
nC
V
A
ns
nC

Related parts for BSO303P