UPA1764G-E1-AT Renesas Electronics America, UPA1764G-E1-AT Datasheet - Page 7

• Manufacturer Part Number: UPA1764G-E1-AT
• Description: MOSFET N-CH DUAL 60V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1764G-E1-AT

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
1000
100
100
100
10
80
60
40
20
1
0
1
0.1
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
50
V
T
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
ch
V
V
V
- Channel Temperature - ˚C
GS
GS
GS
- Drain to Source Voltage - V
= 4.0 V
= 4.5 V
= 10 V
I
0
D
1
1
- Drain Current - A
50
10
10
100
di/dt = 100 A/ s
V
GS
I
= 0 V
D
V
f = 1 MHz
= 3.5 A
GS
C
C
150
C
= 0 V
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rss
iss
Data Sheet G14329EJ2V0DS
100
100
0.01
1000
100
100
60
50
40
30
20
10
0.1
10
10
0
1
1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
0.1
0
V
SWITCHING CHARACTERISTICS
V
GS
8
SD
t
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
= 4.5 V
f
t
- Source to Drain Voltage - V
d(off)
V
V
Q
I
DD
D
DS
G
0.5
- Drain Current - A
= 48 V
1
- Gate Charge - nC
30 V
12 V
16
24
1.0
10
V
GS
t
t
r
d(on)
V
= 0 V
32
GS
PA1764
I
D
V
V
R
Pulsed
= 7 A
DS
GS
G
= 10
= 30 V
= 10 V
40
100
1.5
12
10
8
6
4
2
0
5