FDC6020C Fairchild Semiconductor, FDC6020C Datasheet - Page 3

• Manufacturer Part Number: FDC6020C
• Description: MOSFET N/P-CHAN 20V COMPL 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6020C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.9A, 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 677pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6020CTR; FDC6020C_NL; FDC6020C_NLTR; FDC6020C_NLTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain-Source Diode Characteristics and Maximum Ratings
I
V
t
Q
Symbol
S
rr
Electrical Characteristics
SD
rr
the drain pins. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
θ
JC
is guaranteed by design while R
Parameter
a)
68°C/W when
mounted on a 1in
of 2 oz copper (Single
Operation).
θ
CA
(continued)
is determined by the user's board design.
V
V
I
I
I
I
F
F
F
F
GS
GS
= – 4.2A,d
= 5.9A, d
= – 4.2A,d
= 5.9A, d
= 0 V,
= 0 V,
Test Conditions
2
pad
IF
IF
IF
IF
/d
/d
/d
/d
t
t
t
t
= 100 A/µs
= 100 A/µs
= 100 A/µs
= 100 A/µs
T
A
I
I
= 25°C unless otherwise noted
S
S
= –1.3 A
= 1.3 A
(Note 2)
(Note 2)
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
b)
Min Typ Max Units
102°C/W when mounted
on a minimum pad of 2 oz
copper (Single Operation).
–0.8
0.7
17
15
6
4
–1.3
–1.2
1.3
1.2
FDC6020C RevB (W)
nS
nC
A
V