FDC6020C Fairchild Semiconductor, FDC6020C Datasheet - Page 5
![MOSFET N/P-CHAN 20V COMPL 6SSOT](/photos/5/44/54442/supersot-6_pkg_sml.jpg)
FDC6020C
Manufacturer Part Number
FDC6020C
Description
MOSFET N/P-CHAN 20V COMPL 6SSOT
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC6020C_F077.pdf
(9 pages)
Specifications of FDC6020C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 5.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.9A, 4.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
677pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
6-SSOT FLMP, SuperSOT-6 FLMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6020CTR
FDC6020C_NL
FDC6020C_NLTR
FDC6020C_NLTR
FDC6020C_NL
FDC6020C_NLTR
FDC6020C_NLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC6020C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDC6020C_F077
Manufacturer:
Fairchild Semiconductor
Quantity:
42 544
Typical Characteristics : Q1
0.01
100
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
I
D
R
SINGLE PULSE
= -4.2A
R
DS(ON)
θJA
1
V
T
GS
A
= 102
= 25
= -4.5V
LIMIT
2
o
o
C/W
C
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
3
Q
1
g
, GATE CHARGE (nC)
DC
1s
4
100ms
V
10ms
DS
5
1ms
= -5V
100µs
6
10
10µs
-15V
7
8
-10V
9
100
1100
1000
900
800
700
600
500
400
300
200
100
10
0
8
6
4
2
0
Figure 8. Capacitance Characteristics.
0.01
0
Figure 10. Single Pulse Maximum
C
RSS
C
OSS
0.1
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
8
1
t
1
, TIME (sec)
12
10
SINGLE PULSE
R
θJA
16
T
FDC6020C RevB (W)
100
A
= 102°C/W
f = 1 MHz
V
= 25°C
GS
= 0 V
20
1000