FDS8947A Fairchild Semiconductor, FDS8947A Datasheet

FDS8947A

Manufacturer Part Number

FDS8947A

Description

MOSFET P-CH DUAL 30V 4A 8SOIC

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDS8947A.pdf (5 pages)

Specifications of FDS8947A

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

52 mOhm @ 4A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

27nC @ 10V

Input Capacitance (ciss) @ Vds

730pF @ 15V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Price

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Part Number:

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Manufacturer:

Quantity:

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Part Number:

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FIR

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Company:

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Part Number:

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FSC

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDS8947A-NL

Manufacturer:

Quantity:

50 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDS8947A-NL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

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THERMAL CHARACTERISTICS

General Description

FDS8947A

Dual P-Channel Enhancement Mode Field Effect Transistor

SO-8 P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

Absolute Maximum Ratings

DSS

GSS

STG

SOT-23

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SO-8

- Pulsed

SuperSOT

pin 1

-6

= 25

C unless other wise noted

SuperSOT

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

(Note 1a)

-8

Features

SO-8

-4.0 A, -30 V. R

High density cell design for extremely low R

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package.

FDS8947A

-55 to 150

DS(ON)

- 4.0

-30

-20

1.6

0.9

SOT-223

= 0.080

= 0.052

@ V

= -4.5 V.

= -10 V

March 1998

SOIC-16

DS(ON)

FDS8947A Rev.B

Units

°C/W

°C

Related parts for FDS8947A

FDS8947A Summary of contents

Page 1

... Dual MOSFET in surface mount package. TM SO-8 SuperSOT - unless other wise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) March 1998 = 0.052 @ V = -10 V DS(ON 0.080 @ V = -4.5 V. DS(ON) GS DS(ON) SOIC-16 SOT-223 FDS8947A -30 -20 - 4.0 -20 2 1.6 1 0.9 -55 to 150 Units °C °C/W °C/W FDS8947A Rev.B ...

Page 2

... Min Typ Max - -23 -100 -100 -1 -1 0.044 0.052 T =125°C 0.06 0.085 J 0.067 0.08 -20 8 730 400 110 3.5 3.6 -1.3 -0.75 -1.2 (Note 2) 48 100 0.8 c. 135 O C 0.003 C 0.02 in pad of 2oz copper. Units µ guaranteed FDS8947A Rev.B ...

Page 3

... DRAIN CURRENT (A) D Drain Current and Gate 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.3 0.6 0.9 1 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDS8947A Rev 1.5 ...

Page 4

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss = 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See Note 25°C A 0.1 0 100 SINGLE PULSE TIME (sec) Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 20 30 300 300 FDS8947A Rev.B ...

Page 5

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