FDS8947A Fairchild Semiconductor, FDS8947A Datasheet - Page 4

• Manufacturer Part Number: FDS8947A
• Description: MOSFET P-CH DUAL 30V 4A 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8947A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 730pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
0.05
0.01
0.5
0.1
10
50
20
Figure 7. Gate Charge Characteristics.
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
5
2
1
0.1
0
I
D
= -4.0A
SINGLE PULSE
R
0.005
0.002
0.001
0.05
0.02
0.01
0.2
-V
T
0.5
0.2
0.1
JA
0.0001
A
A
1
GS
= 135°C/W
= 25°C
= -10V
5
-V
0.5
DS
Q
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
1
0.2
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in Note 1c.
0.1
0.05
10
0.001
0.02
2
0.01
Transient thermal response will change depending on the circuit board design.
V
Single Pulse
DS
= -5V
5
15
-10V
10
-15V
0.01
20 30
20
(continued)
50
0.1
t , TIME (sec)
1
2000
1000
500
300
200
100
30
25
20
15
10
50
5
0
0.01
0.1
Figure 10. Single Pulse Maximum Power
Figure 8. Capacitance Characteristics.
f = 1 MHz
V
1
GS
0.2
= 0 V
-V
0.1
DS
0.5
, DRAIN TO SOURCE VOLTAGE (V)
Dissipation.
SINGLE PULSE TIME (sec)
P(pk)
0.5
1
T - T
R
10
Duty Cycle, D = t /t
J
1
R
JA
t
1
A
JA
(t) = r(t) * R
2
t
= P * R
2
= 135°C/W
R
10
SINGLE PULSE
1
5
JA
JA
(t)
2
T = 25°C
JA
=See Note 1C
100
A
10
50 100
C oss
C rss
C iss
FDS8947A Rev.B
300
20 30
300