FDW2503NZ Fairchild Semiconductor, FDW2503NZ Datasheet - Page 3

• Manufacturer Part Number: FDW2503NZ
• Description: MOSFET N-CH DUAL 20V 5.5A 8-TSSO
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2503NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1286pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
60
50
40
30
20
10
40
30
20
10
0
1
Figure 3. On-Resistance Variation with
0
-50
Figure 1. On-Region Characteristics.
0
1
Figure 5. Transfer Characteristics.
V
V
GS
I
D
GS
V
= 5.5A
= 4.5V
-25
DS
= 4.5V
= 5V
0
V
V
3.5V
T
1.5
DS
1
J
GS
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
, GATE TO SOURCE VOLTAGE (V)
25
3.0V
50
T
A
2
2
= -55
75
2.5V
o
C
100
2.0V
125
o
o
2.5
C)
3
C
125
25
150
o
C
175
4
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.05
0.04
0.03
0.02
0.01
100
0.1
1.8
1.6
1.4
1.2
0.8
10
1
with Source Current and Temperature.
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
0
1
0
V
GS
Drain Current and Gate Voltage.
T
= 0V
V
A
GS
= 25
0.2
Gate-to-Source Voltage.
= 2.5V
10
V
SD
o
C
, BODY DIODE FORWARD VOLTAGE (V)
V
T
GS
2
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
20
I
D
, DRAIN CURRENT (A)
o
3.0V
C
T
A
= 125
25
0.6
30
3
o
o
C
C
3.5V
-55
0.8
40
o
C
4.0V
4
FDW2503NZ Rev C1(W)
I
50
D
1
= 2.8A
4.5V
1.2
60
5