SI5517DU-T1-E3 Vishay, SI5517DU-T1-E3 Datasheet - Page 13

• Manufacturer Part Number: SI5517DU-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5517DU-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A, 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A, - 4.6 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 10 ns, 55 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5517DU-T1-E3TR

Package Information
Vishay Siliconix
PowerPAK
www.vishay.com
2
ECN: C10-0618-Rev. C, 19-Jul-09
DWG: 5940
DIM.
D
K
A
E
A
C
D
H
K
b
E
e
L
1
2
1
2
®
ChipFET
L
b
H
D1 (8)
SI (1)
E
2
Backside view of dual pad
MIN.
0.70
0.25
0.15
2.92
1.07
1.82
0.92
0.15
0.20
0.20
0.30
D1 (8) D1 (7)
0
®
SI (1) GI (2) S2 (3)
GI (2)
D1 (7)
DUAL PAD
D
e
K
S2 (3)
1
D2 (6)
D2 (6) D2 (5)
MILLIMETERS
Z
0.65 BSC
NOM.
G2 (4)
0.75
0.30
0.20
3.00
1.20
1.90
1.05
0.20
0.35
S2 (5)
G2 (4)
-
-
-
C
K
E
A
MAX.
0.85
0.05
0.35
0.25
3.08
1.32
1.98
1.17
0.25
0.40
-
-
0.028
0.010
0.006
0.115
0.042
0.072
0.036
0.006
0.008
0.008
0.012
MIN.
DETAIL Z
0
0.026 BSC
INCHES
NOM.
0.030
0.012
0.008
0.118
0.047
0.075
0.041
0.008
0.014
-
-
-
Document Number: 73203
A
1
MAX.
0.033
0.002
0.014
0.010
0.121
0.052
0.078
0.046
0.010
0.016
-
-
19-Jul-10