SI5517DU-T1-E3 Vishay, SI5517DU-T1-E3 Datasheet - Page 14

• Manufacturer Part Number: SI5517DU-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5517DU-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A, 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A, - 4.6 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 10 ns, 55 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5517DU-T1-E3TR

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK
www.vishay.com
10
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(0.009)
(0.014)
0.225
0.350
(0.046)
1.175
Note: This is Flipped Mirror Image
Pin #1 Location is Top Left Corner
Recommended Minimum Pads
Dimensions in mm/(Inches)
(0.012)
(0.012)
0.300
0.300
®
ChipFET
(0.106)
2.700
(0.026)
(0.026)
0.650
0.650
®
(0.014)
0.350
Dual
(0.060)
1.525
Document Number: 69949
(0.012)
0.300
(0.008)
0.200
Revision: 21-Jan-08