IRF5850 International Rectifier, IRF5850 Datasheet - Page 2

• Manufacturer Part Number: IRF5850
• Description: MOSFET 2P-CH 20V 2.2A 6TSOP
• Manufacturer: International Rectifier

Specifications of IRF5850

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 320pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:

‚
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
d(on)
d(off)
S
rr
r
f
DSS
V
fs
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width
2
Repetitive rating; pulse width limited by
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.011 –––
–––
–––
–––
–––
–––
–––
–––
––– 0.66 –––
––– 0.83 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
Surface mounted on FR-4 board, t
3.5
–––
––– 0.135
––– 0.220
–––
–––
–––
––– -100
–––
320
–––
7.7
3.6
8.3
23
14
31
28
56
40
-1.2
-1.0
–––
-1.2
–––
–––
100
–––
–––
–––
–––
–––
–––
-25
5.4
0.96
35
12
9.0
V/°C
nC
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0kHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs ‚
V
V
showing the
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -2.2A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= V
= -10V, I
= -16V, V
= -16V, V
= -10V
= -15V
= 0V, I
= -4.5V, I
= -2.5V, I
= -12V
= 12V
= -4.5V ‚
= -10V ‚
= -4.5V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -0.96A, V
= -0.96A
D
D
GS
GS
= -250µA
= -2.2A
= -2.2A ‚
= -1.9A ‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
J
GS
= 125°C
G
= 0V ‚
S
D