IRF5850 International Rectifier, IRF5850 Datasheet - Page 4

• Manufacturer Part Number: IRF5850
• Description: MOSFET 2P-CH 20V 2.2A 6TSOP
• Manufacturer: International Rectifier

Specifications of IRF5850

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 320pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
500
400
300
200
100
0.1
10
0
1
0.4
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
T = 150 C
C iss
C rss
C oss
-V
J
-V
Drain-to-Source Voltage
DS
SD
0.6
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
0.8
T = 25 C
gs
gd
ds
J
+ C
+ C
10
f = 1MHz
°
gd ,
gd
1.0
C
ds
SHORTED
V
1.2
GS
= 0 V
100
1.4
100
0.1
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
T
T
Single Pulse
I =
D
A
J
Fig 6. Typical Gate Charge Vs.
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-2.2A
-V
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
2
1
BY R
V
V
DS
DS
4
DS(on)
=-16V
=-10V
10
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6
100us
1ms
10ms
100
8