IRF7103Q International Rectifier, IRF7103Q Datasheet - Page 7

• Manufacturer Part Number: IRF7103Q
• Description: MOSFET N-CH 50V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7103Q

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 255pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7103Q

www.irf.com
Fig 17. Gate Charge Test Circuit
60
48
36
24
12
0
25
Fig 16a. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
12V
V
GS
50
Same Type as D.U.T.
Current Regulator
.2 F
Vs. Drain Current
J
50K
3mA
75
Current Sampling Resistors
.3 F
I
G
100
D.U.T.
I
D
125
TOP
BOTTOM
+
-
V
DS
150
°
1.2A
2.5A
3.0A
I D
175
Fig 16c. Unclamped Inductive Test Circuit
Fig 16d. Unclamped Inductive Waveforms
I
AS
Fig 18. Basic Gate Charge Waveform
GS
R G
20V
V
V DS
G
t p
Q
t p
GS
I AS
D.U.T
0.01
L
V
Q
Charge
Q
(BR)DSS
IRF7103Q
GD
G
15V
DRIVER
+
-
V DD
7
A