IRF7103Q International Rectifier, IRF7103Q Datasheet - Page 8

• Manufacturer Part Number: IRF7103Q
• Description: MOSFET N-CH 50V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7103Q

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 255pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7103Q

IRF7103Q
8
1000
0.01
100
0.1
10
25
20
15
10
1
1.0E-08
5
0
Fig 20. Maximum Avalanche Energy
25
Starting T J , Junction Temperature (°C)
50
1.0E-07
Vs. Temperature
Duty Cycle = Single Pulse
75
TOP
BOTTOM 10% Duty Cy cle
I D = 3.0A
1.0E-06
0.10
Fig 19. Typical Avalanche Current Vs.Pulsewidth
100
0.01
0.05
Single Pulse
125
1.0E-05
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
t
not exceeded.
Figures 12a, 12b.
T
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
1.0E-03
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
1.0E-02
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
1.0E-01
D (ave)
pulsewidth,
jmax
Tj = 25°C due to
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
www.irf.com
1.0E+00
thJC
tav
jmax
1.0E+01
is