BSO615NV Infineon Technologies, BSO615NV Datasheet - Page 2

MOSFET DUAL N-CH 60V 3.1A 8-SOIC

BSO615NV

Manufacturer Part Number
BSO615NV
Description
MOSFET DUAL N-CH 60V 3.1A 8-SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSO615NV

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 20µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO615NVINTR
SP000011097

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO615NV
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO615NV
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Data Sheet
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
Thermal resistance @ 10 sec., min. footprint
Thermal resistance @ 10 sec.,
6 cm
D
connection. PCB is vertical without blown air.
GS
DS
DS
GS
GS
= 20 µA
= 60 V, V
= 60 V, V
= 0 V, I
= 20 V, V
= 10 V, I
2
cooling area
D
D
= 0.25 mA
GS
GS
DS
= 3.1 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 ˚C
= 150 ˚C
= V
DS
2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJS
th(JA)
th(JA)
min.
min.
2.1
60
-
-
-
-
-
-
-
Values
Values
0.09
typ.
typ.
0.1
10
10
3
-
-
-
-
BSO 615NV
max.
max.
0.12
62.5
100
100
100
35
1
4
-
Unit
V
µA
nA
Unit
K/W
05.99

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